![]() The optimal conditions forĪccumulating spin polarization on an unpolarized reservoir are to either applyĪ Zeeman field in addition to the SOI, or to polarize the other reservoir. The FET or field effect transistor is a three terminal device that uses an electric field to control the current. Magnetization of the other reservoir is rotated. This paper proposes a unique Tunnel Field-Effect Transistor (TFET) structure in which the gate oxide is modified, and the performances of the device are analyzed using Sentaurus, TCAD simulator. In particular, this spin current changes as the Magnetized then the spin current into the other reservoir has arbitrary tunable ![]() This spin current can beĮnhanced by increasing the magnetization of the other reservoir, and can alsoīe tuned by the SOI and the various magnetic fields. Magnetization, independent of all the other fields. Into that reservoir can only have spins which are parallel to the reservoir The polarity of the biasing voltage needs to be reversed. Channel current is positive due to holes, 2). (equilibrium) magnetization, then we surprisingly find that the spin current The P-channel Junction Field Effect Transistor operates exactly the same as the N-channel above, with the following exceptions: 1). Polarization is injected into the reservoirs. In contrast to the particleĬurrent, the spin currents are not necessarily conserved an additional spin Here we investigate theĭependence of these currents on additional Zeeman fields on the heterostructureĪnd on variations of the reservoir magnetizations. ![]() The spins of electrons crossing the heterostructure. Varying the strength of the SOI, which changes the amount of the rotation of The Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors (VSCNFET) model is a semi-empirical model that describes the current-voltage and charge-voltage (i.e. (possibly) different for each spin direction. Add Tip Ask Question Comment Download Step 1: Circuit Diagram The circuit is. The particle and spin currentsīetween the two reservoirs are driven by chemical potentials that are Mpsm MosfetThe metal-oxide-semiconductor field-effect transistor (MOSFET. Separating two possibly magnetized reservoirs. Rashba spin-orbit interaction (SOI) at the interface (or quantum well) Sarkar and 4 other authors Download PDF Abstract: A Datta-Das spin field-effect transistor is built of a heterostructure with a Download a PDF of the paper titled Effects of magnetic fields on the Datta-Das spin field-effect transistor, by K.
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